Samsung has revealed their 512GB RAM clocked at 7200MHz. Samsung is the first to develop this memory module in the technology industry. According to our source tom’s HARDWARE, this was revealed at Hot Chips 33. This memory module by Samsung is 40% faster with twice the capacity and just draws power at 1.1V.
The design of this DDR5 memory module is eight-stacked DDR5 dies that are inter-connected to TSV Technology. In comparison to DDR4 memory modules design, this is a huge improvement as these were built on only four DDR4 dies. Now, one would think that it would be significantly larger in size but this is not the case here. Samsung implemented a thin wafer handling technique and reduced the gaps between dies by 40%. So now, the DDR5 stack measures 1.0mm and in comparison, the DDR4 stack measures 1.2mm.
Operating at 1.1V, DDR5 7200 memory beats the DDR4 even in power requirements. This is possible due to Samsungs high-efficiency power management IC (PMIC), voltage regulator, and the High-K Metal gate process. On-die error-correction codec is responsible to ensure more reliable and secure data handling and as expected it is present in these memory modules.
512GB RAM seems to be too much for the normal consumer and it’s true. Samsung’s DDR5 7200 modules are for servers and data centers. DDR5 modules will max out at 64GB’s and this should excite you as AMD’s and Intel’s next-generation platforms will support higher RAM capacities. For the general consumers, you could have around 64×4, that is 256GB RAM. This was not available before and is probably overkill for most people out there, but hey, if you need it, it’s going to be supported soon.
Samsung will begin producing DDR5 7200MHz RAM by the end of this year around December. The mainstream shift to DDR5 is not going to happen until 2023-2024 is what Samsung says. However, Intel’s next 12th generation Alder Lake hybrid chips which are set to be announced in the next couple of months are going to be the first processors to support DDR5 memory.
